A novel method of strain‐aligning polymer films is introduced and applied to regioregular poly(3‐hexylthiophene) (P3HT), showing several important features of charge transport. The polymer backbone is shown to align in the direction of applied strain resulting in a large charge‐mobility anisotropy, where the in‐plane mobility increases in the applied strain direction and decreases in the perpendicular direction. In the aligned film, the hole mobility is successfully represented by a two‐dimensional tensor, suggesting that charge transport parallel to the polymer backbone within a P3HT crystal is strongly favored over the other crystallographic directions. Hole mobility parallel to the backbone is shown to be high for a mixture of plane‐on and edge‐on packing configurations, as the strain alignment is found to induce a significant face‐on orientation of the originally highly edge‐on oriented crystalline regions of the film. This alignment approach can achieve an optical dichroic ratio of 4.8 and a charge‐mobility anisotropy of 9, providing a simple and effective method to investigate charge‐transport mechanisms in polymer semiconductors.

The elastic moduli of polythiophenes, regioregular poly(3-hexylthiophene) (P3HT) and poly-(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT), are compared to their field effect mobility showing a proportional trend. The elastic moduli of the films are measured using a buckling-based metrology, and the mobility is determined from the electrical characteristics of bottom contact thin film transistors. Moreover, the crack onset strain of pBTTT films is shown to be less than 2.5%, whereas that of P3HT is greater than 150%. These results show that increased long-range order in polythiophene semiconductors, which is generally thought to be essential for improved charge mobility, can also stiffen and enbrittle the film. This work highlights the critical role of quantitative mechanical property measurements in guiding the development of flexible organic semiconductors.

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Spray-deposited poly-3-hexylthiophene (P3HT) transistors were characterized using electrical and structural methods. Thin-film transistors with octyltrichlorosilane treated gate dielectrics and spray-deposited P3HT active layers exhibited a saturation regime mobility as high as 0.1 cm2 V−1 s−1, which is comparable to the best mobilities observed in high molecular mass P3HT transistors prepared using other methods. Optical and atomic force microscopy showed the presence of individual droplets with an average diameter of 20 μm and appreciable large-scale film inhomogeneities. Despite these inhomogeneities, near-edge x-ray absorption fine structure spectroscopy of the device-relevant channel interface indicated excellent orientation of the P3HT.

Phone: 001 301 405 6156Published as J. Phys. Chem. C 112, 5646-5650 2008 2 ABSTRACT Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material at number densities from 0.001 to 0.474 to quantify the relative effects of impurity content and grain boundary structure on transport in pentacene thin-film transistors. Atomic force microscopy (AFM) and electrical measurements of top-contact pentacene thin-film transistors have been employed to directly correlate initial structure and final film structures, with the device mobility as a function of added impurity content. The results reveal a factor four decrease in mobility without significant changes in film morphology for source PnQ number fractions below ~0.008. For these low concentrations, the impurity thus directly influences transport, either as homogeneously distributed defects or by concentration at the otherwise-unchanged grain boundaries. For larger impurity concentrations, the continuing strong decrease in mobility is correlated with decreasing grain size, indicating an impurity-induced increase in the nucleation of grains during early stages of film growth.