Abstract:The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN) high electron mobility transistors (HEMT) lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating power, device channel-case, thermal resistance, and baseplate temperature. We found that power or temperature alone could not explain difference in observed degradation, and that accelerated life tests employed by industry can benefit by considering the impact of accelerating factors besides temperature. Specifically, we found that the voltage used to reach a desired power dissipation is important, and also that temperature acceleration alone or voltage alone (without much power dissipation) is insufficient to assess lifetime at operating conditions.

We performed an experiment on AlGaN/GaN HEMTs with high voltage and high power as stressors. We found that devices tested under high power generally degraded more than those tested under high voltage. In particular, the high-voltagetested devices did not degrade significantly as suggested by some papers in the literature. The same papers in the literature also suggest that high voltages cause cracks and pits. However, the high-voltage-tested devices in this study do not exhibit cracks or pits in TEM images, while the high-power-tested devices exhibit pits.

Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.