In this paper, genetic algorithm (GA) has been applied to extract the Schottky-barrier height, ideality factor and series resistance ,this new method presents the effect of wide range temperature of Schottky-barrier diode (SBD) model using forward current-voltage (I-V) characteristics, is discussed. The results found was compared with experimental current-voltage data, it has been confirmed that the proposed method can obtain higher parameter precision with better computational efficiency more easily than other methods.

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This paper proposes a new method based on a genetic algorithm (GA) approach to optimize the electrical parameters such as height barrier, ideality factor, fill factor, open-circuit voltage and power conversion efficiency, in order to improve the electrical performance of Schottky solar cells in an over wide range of temperature. Thus the parameters research process called objective function is used to find the optimal electrical parameters providing greater conversion efficiency. The proposed model results are also compared to experimental and analytical I-V data, where a good agreement has been found between them. Therefore, this approach may provide a theoretical basis and physical insights for Schottky solar cells.

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