We present the results of a thorough study of wet chemical methods for transferring chemical vapor deposition grown graphene from the metal growth substrate to a device-compatible substrate. On the basis of these results, we have developed a "modified RCA clean" transfer method that has much better control of both contamination and crack formation and does not degrade the quality of the transferred graphene. Using this transfer method, high device yields, up to 97%, with a narrow device performance metrics distribution were achieved. This demonstration addresses an important step toward large-scale graphene-based electronic device applications.

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In this work, a Fourier transform infrared spectroscopy-based method is developed to measure the gas-phase dynamics occurring during atomic layer deposition. This new technique is demonstrated during the deposition of hafnium oxide using tetrakis͑ethylmethylamido͒hafnium and water vapor. The repeatability of the deposition process is utilized to signal average across multiple cycles. This approach required synchronizing the precursor injection pulses with the moving mirror of the spectrometer. The system as implemented in this work achieves spectra with a time resolution of Ϸ150 ms, but better resolution can be easily obtained. Using this technique, the authors are able to optically measure transients in the molecular number densities of the precursors and product that are the effects of mass transport and surface reactions.

Atomic layer deposition of titanium dioxide using tetrakis(dimethylamido)titanium (TDMAT) and water vapor is studied by reflection-absorption infrared spectroscopy (RAIRS) with a time resolution of 120 ms. At 190 °C and 240 °C, a decrease in the absorption from adsorbed TDMAT is observed without any evidence of an adsorbed product. Ex situ measurements indicate that this behavior is not associated with an increase in the impurity concentration or a dramatic change in the growth rate. A desorbing decomposition product is consistent with these observations. RAIRS also indicates that dehydroxylation of the growth surface occurs only among one type of surface hydroxyl groups. Molecular water is observed to remain on the surface and participates in reactions even at a relatively high temperature (110 °C) and with long purge times (30 s).