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The cross section for electron photodetachment has been measured for the acetylide anion (HC2−) using an ion cyclotron resonance spectrometer in conjunction with a xenon arc lamp. Calculation of the photodetachment behavior near threshold and an estimate of the Franck–Condon factors for the anion→neutral transition allow us to determine EA (HC2⋅) = 2.94±0.10 eV. A theoretical determination using eighth-order perturbation theory gives an adiabatic electron affinity of 3.18±0.25 eV, in good agreement with the experimental result. The use of a thermochemical cycle with the experimental electron affinity and gas-phase acidity data gives a C–H bond dissociation energy in acetylene of 132±5 kcal/mol.

It has been determined that anodic oxidation of (Hg,Cd)Te occurs via a dissolution-precipitation mechanism followed by a bulk growth process which involves either interstitial transport of metal cations and/or hydroxyl anion transport via successive jumps. The initial film formation can be understood at least partially in terms of electrochemical parameters and, therefore, can be controlled in a rational manner. For example, stirring the anodization solution during dissolution prohibits film formation due to an increase in the rate of diffusion of ionic species away from the anode. MOS structures fabricated incorporating this electroetch in the passivation process show unique properties which provide evidence for a direct correlation between initial oxide formation and the resultant (Hg,Cd)Te surface electronic properties.