New generations of organic semiconducting devices have driven the search to replace the well-established indium-doped tin oxide (ITO) and fluorine-doped tin oxide (FTO) electrodes. [1,2] The requirements for alternative materials include a high electrical conductivity and possibility to prepare thin, transparent and flexible films with large areas at low cost. ITO is used as anode in organic light-emitting diodes (OLEDs) due to its transparency in the visible region and high conductivity (>10 3 S cm −1 ). However, the high Schottky barrier on ITO (or FTO) interfaces makes it difficult to inject charge carriers into the active semiconducting layer, especially because of its work function of ≈4.4 eV. [3] This problem can be mitigated by treating its surface to alter the working function or by inserting intermediate layers to change electron mobility and promote a better balance between the injected charge carriers. [4] Another possibility is to employ chalcogenide metals such as copper selenide that can exist in different compositions, namely stoichiometric Cu 2 Se, Cu 3 Se 2 , CuSe, and CuSe 2 and non-stoichiometric Cu 2−X Se. [5][6][7][8][9] The latter is a p-type semiconductor with an energy gap of ≈2.3 eV and work function of 4.17 eV, therefore promising as a hole-injecting electrode for OLEDs. [7,[9][10][11] Films of Cu 2−X Se can be prepared with vacuum evaporation, [12,13] cation-anion combination, [14][15][16] cation-anion combination in hot coordinating solvents, [17][18][19] element combination in the solid state, [20] galvanic synthesis, [21] chemical reduction from CuSe, [22] electrochemical methods, [23] and chemical bath deposition. [24][25][26] We demonstrate here that Cu 2−X Se films can function as electrodes for organic electronics. The films were synthesized from copper deposited from the vapor phase followed by chemical bath deposition. With polyester as substrate, the resulting films are flexible, thin and transparent. For comparison, devices with an FTO electrode are also discussed. Poly-[2-methoxy-5-(2ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) was used in a light-emitting inorganic-organic hybrid diode (IOHLED). The effectiveness of Cu 2−X Se as electrode was demonstrated in a comparison with a device containing an intermediate layer of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) In this paper, it is demonstrated that copper selenide (Cu 2−X Se) films onto polyester sheets may serve as transparent electrodes in inorganic-organic hybrid light emission devices (IOHLED), as possible replacement to indium tin oxide or fluorine-doped tin oxide. The Cu 2−X Se film synthesized via bath chemical deposition is electrically stable with a sheet resistance of 148 Ω sq −1 and optical bandgap of 2.3 eV. IOHLED are made with poly(3,4ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) as an organic layer for hole transport and poly[2-metoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) as electroluminescent semiconductor. The IOHLED emits in the visible range owing to the simu...