We attempted to improve the photon absorption of the photoactive layer in organic photovoltaic (OPV) devices by device engineering without changing their thickness. Soft nanoimprinting lithography was used to introduce a 1D grating pattern into the photoactive layer. The increase in photocurrent caused by the propagating surface plasmon–polariton mode was quantitatively analyzed by measuring the external quantum efficiency in transverse magnetic and transverse electric modes. In addition, the introduction of an ultrathin substrate with a refractive index of 1.34 improved photon absorption by overcoming the mismatched optical impedance at the air/substrate interface. As a result, the power conversion efficiency (PCE) of an ultrathin OPV with a 400 nm grating period was 8.34%, which was 11.6% higher than that of an unpatterned ultrathin OPV, and the PCE was 3.2 times higher at a low incident light angle of 80°, indicating very low incident light angle dependence.

The commercialization of organic photovoltaics (OPVs) requires a high level of stability and a high‐power conversion efficiency (PCE). To satisfy these requirements, inverted OPVs with electron transport layers of ZnO obtained by electron beam annealing (EBA) are fabricated, and their properties are compared with those of a reference device with a thermal‐treated ZnO layer. Electrons are extracted from Ar plasma and accelerated by supplying a negative DC voltage; the ZnO layer is annealed using the energy from the accelerated electrons. The PCE of the OPV with a ZnO layer obtained by the optimal EBA process is 15.6%, which is 11.4% higher than that of the reference device. In addition, the OPV device retains 90.1% of its initial PCE after it is stored at room temperature for 30 days and 70.1% of the initial PCE after 280 h at 90 °C. Further, the operational stability is measured for 500 min at the maximum power point under 1 sun illumination in ambient air. The OPV with the ZnO layer treated under optimal EBA conditions retains 85.0% of the initial PCE and shows outstanding environmental and thermal stability.

In this study, an indium gallium zinc tin oxide (IGZTO) thin-film transistor (TFT) applied with deep ultraviolet (DUV) and thermal dual treatment (DTT) was fabricated for low-temperature activation of amorphous...

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