In this paper based on recently introduced approach we formulated some recommendations to optimize manufacture drift bipolar transistor to decrease their dimensions and to decrease local overheats during functioning. The approach based on manufacture a heterostructure, doping required parts of the heterostructure by dopant diffusion or by ion implantation and optimization of annealing of dopant and/or radiation defects. The optimization gives us possibility to increase homogeneity of distributions of concentrations of dopants in emitter and collector and specific inhomogenous of concentration of dopant in base and at the same time to increase sharpness of p-n-junctions, which have been manufactured framework the transistor. We obtain dependences of optimal annealing time on several parameters. We also introduced an analytical approach to model nonlinear physical processes (such as mass-and heat transport) in inhomogenous media with time-varying parameters.

It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions, which include into their system). In this situation one can also obtain increasing of homogeneity of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction. Optimization of technological process with using inhomogeneity of heterostructure give us possibility to manufacture the transistors as more compact.

KEYWORDS Bipolar transistors, multivibrator, increasing of density of elements of multivibrator

The paper describes an approach of increasing of integration rate of elements of integrated circuits. The approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one should manufacture a heterostructure with specific configuration. After that several special areas of the heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical approaches of modeling of technological process.

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