CH3NH3PbI3(MAPbI3) perovskite thin films were applied for piezoelectric generators under various applied pressures, poling field conditions, and switching polarity test.

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Direct graphene synthesis on substrates via chemical vapor deposition (CVD) is an attractive approach for manufacturing flexible electronic devices. The temperature for graphene synthesis must be below ∼200 °C to prevent substrate deformation while fabricating flexible devices on plastic substrates. Herein, we report a process whereby defect-free graphene is directly synthesized on a variety of substrates via the introduction of an ultrathin Ti catalytic layer, due to the strong affinity of Ti to carbon. Ti with a thickness of 10 nm was naturally oxidized by exposure to air before and after the graphene synthesis, and the various functions of neither the substrates nor the graphene were influenced. This report offers experimental evidence of high-quality graphene synthesis on Ti-coated substrates at 150 °C via CVD. The proposed methodology was applied to the fabrication of flexible and transparent thin-film capacitors with top electrodes of high-quality graphene.

When crystalline ZnO films with a thickness of 30 nm and hydrophilic properties were deposited at room temperature onto a glass substrate via radio frequency sputtering, they exhibited antifingerprinting qualities following annealing treatment that was simple and accomplished at low temperature (100 °C). Hydrophobic properties were achieved using as-deposited ZnO films with hydrophilic properties via annealing treatment without the deposition of a protective layer with hydrophobic properties. The annealed 30 nm ZnO films showed a high transmittance (∼91.3%) comparable to that of a glass substrate at a wavelength of 550 nm. The annealed films showed strong antibacterial activity against E. coli and S. aureus bacteria. The ZnO films with a thickness of 30 nm showed predominant mechanical durability with strong antibacterial activity for smart-phone panel applications.

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