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In an effort to evaluate the practicability of an imprinting technique for amorphous chalcogenide film in Ge-based compositions, we investigate the deformation behavior of the surface of amorphous GeSe 2 film deposited via a thermal evaporation route according to varying static loads applied at elevated temperatures. We observe that, under these static loading conditions, crystallization tends to occur on its surface relatively more easily than in As-based As 2 Se 3 films. As for the present GeSe 2 film, higher processing temperatures are required in order to make its surface reflect the given stamp patterns well; however, in this case, its surface becomes partially crystallized in the monoclinic GeSe 2 phase. The increased vulnerability of this amorphous GeSe 2 film toward surface crystallization under static loading, when compared with the As 2 Se 3 counterpart, is explained in terms of the topological aspects of its amorphous structure.

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