This paper reviews recent developments in N20-and NO-based oxynitride gate dielectrics for CMOS ULSI applications. The motivations and significant advantages of N2OINO-based ultrathin oxynitride gate dielectrics for dual-gate CMOS ULSI are reviewed. Results will be presented to demonstrate the superior device reliability of ultra thin N20/NO oxides over the control oxides, with particular focus on boron diffusion barrier properties, TDDB, and MOSFET hot carrier immunity.

No abstract