We demonstrate two-dimensional (2D) multilayered molybdenum disulfide (MoS2) transistor with molybdenum (Mo) side and edge contacts, which is deposited by using DC-sputtering method. It exhibits field-effect mobility of 23.9 cm 2 /Vs and on/off ratio of 10 6 in a linear region. Current-voltage study under different temperatures (300-393 K) reveals that Mo-MoS2 transistor shows a band transport characteristics, and a Schottky barrier height of 0.14 eV is estimated using thermionic emission theory. Finally, side and edge contact of Mo-MoS2 are confirmed through transmission electron microscope (TEM) analysis. Our results not only show that Mo can be an alternative contact metal to other low work-function metals but also that edge contact may play an important role in resolving performance degradation over thickness increase of MoS2 channel layer.

Solid solutions of Bi2Te-Bi2Sa, pseudo-binary system were mechanically alloyed, cold pressed and then sintered at Werent temperatures between 250°C and 380°C. By sintering specimens several hours in evacuated ampoules, the equilibrium on thermoelectric properties were obtained. Signilicant differences in thermoelectric properties were found between the sintered materials and the s q l e crystals grown by the conventional solidification processes. Besides the well known cornposition of BiZTezSe, surgular properties were found at the composition of BizTeSez. In the BizSe3 rich region, the thermal conductivity at room temperature showed unusal behaviour. The most plausible explanation for such phenomena appeared to be the inversion of conduction and valence zones. Detailed examination of the temperature dependence of the electrical conductivity confirmed this explanation.