We have performed x-ray absorption spectroscopy (XAS) measurements on a series of Ir-based 5d transition metal compounds, including Ir, IrCl3, IrO2, Na2IrO3, Sr2IrO4, and Y2Ir2O7. By comparing the intensity of the "white-line" features observed at the Ir L2 and L3 absorption edges, it is possible to extract valuable information about the strength of the spin-orbit coupling in these systems. We observe remarkably large, non-statistical branching ratios in all Ir compounds studied, with little or no dependence on chemical composition, crystal structure, or electronic state. This result confirms the presence of strong spin-orbit coupling effects in novel iridates such as Sr2IrO4, Na2IrO3, and Y2Ir2O7, and suggests that even simple Ir-based compounds such as IrO2 and IrCl3 may warrant further study. In contrast, XAS measurements on Re-based 5d compounds, such as Re, ReO2, ReO3, and Ba2FeReO6, reveal statistical branching ratios and negligible spin-orbit coupling effects.

Flexoelectricity can play an important role in the reversal of the self-polarization direction in epitaxial BiFeO3 thin films. The flexoelectric and interfacial effects compete with each other to determine the self-polarization state. In Region I, the self-polarization is downward because the interfacial effect is more dominant than the flexoelectric effect. In Region II, the self-polarization is upward, because the flexoelectric effect becomes more dominant than the interfacial effect.

Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.

Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO3 thin films. An intriguing, so far never demonstrated, effect of internal electric field (Eint ) on defect formation is explored by a means of flexoelectricity. Our study provides novel insight into defect engineering, as well as allows a pathway to design defect configuration and associated electronic function.