1 Fructose-1,6-diphosphate (FDP), a glycolytic metabolite, is reported to ameliorate in¯ammation and inhibit the nitric oxide production in murine macrophages stimulated with endotoxin. It is also reported that FDP has cytoprotective eects against hypoxia or ischaemia/reperfusion injury in brain and heart. However, underlying mechanisms of its various biological activities are not completely understood. 2 In this study, we examined the eects of FDP on UVB-induced prostaglandin production in HaCaT keratinocytes. 3 Ultraviolet B (UVB, 280 ± 320 nm) irradiation (30 mJ cm 72 ) increased prostaglandin E 2 (PGE 2 ) production, which was signi®cantly decreased by FDP in a concentration dependent manner. NS-398, a cyclo-oxygenase-2 (COX-2) selective inhibitor completely inhibited UVB-induced PGE 2 production showing that COX-2 activity is responsible for the increase in PGE 2 production under our experimental conditions. 4 UVB irradiation increased total COX activity and COX-2 mRNA in HaCaT keratinocytes, which were signi®cantly blocked by FDP in a concentration dependent manner. 5 N-acetylcysteine (NAC) signi®cantly attenuated UVB-induced PGE 2 production, COX activity and COX-2 mRNA expression indicating oxidative components might contribute to these events. 6 FDP reduced UVB-induced increase in cellular reactive oxygen species (ROS) level although it did not show direct radical scavenging eect in the experiment using 1,1-diphenyl-2picrylhydrazil (DPPH). FDP preserved the cellular antioxidant capacity including catalase activity and GSH content after irradiation. 7 Our data obtained hitherto suggest that FDP may have a protective role in UVB-injured keratinocyte by attenuating PGE 2 production and COX-2 expression, which are possibly through blocking intracellular ROS accumulation.

A coordination-based strategy was employed to produce Ag nanoplates with high aspect ratios. Ag nanoplates were synthesized in the presence of acetonitrile, which served both as the co-solvent and as the ligand to form complexes with the Ag+ ions.

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Carbon nanotnbe (CNT) has been tried to be used as electron emitting sources in the large-area field emission display(FED) [1,23]. In order for CNT-based FED to he a candidate for the large screen HDTV, it should be manufactured at a low price that consumers can afford. To realize the low cost objective, low voltage driven CNT cathode structure should be implemented. In our previous stndy, the large-size under-gate cathode structure has been developed and introduced in the literahxe[2]. The peak anode cnrrent density of 2.5 mA/cmz was obtained at the cathode-to-gate voltage of a b u t 130 V. During the feasibility stndy, it was observed that the CNT-tocounter electrode gap(dc) is very critical to the operation voltage. Therefore, it was concluded that dc should be reduced as small as possible.i Figure 1 shows the schematic view of the under-gate cathode structure. The typical fabrication processes have been introduced in the literature [2]. In order to fabricate the cathode with micron-sized dc, some modifications are needed during the fabrication processes. The modified processes will be reported elsewhere.The fabricated cathode substrate is 4.8-diagonal in size, and the pixel number is 128*3*128. The CNT-to-CNT distance is 233 pn in pitch. Figure 2 illustrates the scanning electrun microscopic image of the fabricated cathode with a gap of a b u t 1 p. It can be seen that dc is clearly defined. Figure 3 shows the I-V chapAeristics of five cathodes Electrical measurements were made in a vacuum chamber at the pressure of 3x10~' torr. During testing, the gates were grounded, the anode was biased to +700 V, and the cathodes were connected with the scan driver IC's which operated at the duty ratio of 111000. The gap between the anode and the cathode was maintained to be 1 mm. Comparing the cathodes B, C, D, and E, it is seen that the driving voltage decreases as dc decreases.When dc decreases from 30 p m to 1.6 pm, the cathode-to-gate voltage for the anode current density of 2.5 pA/mz remarbbly decreases from 130 V to 73 V. Fnrthenuore, by using the high purity CNT powder for the CNT paste, the cathode-to-gate voltage was noticeably reduced from 77 V to 57 V at the same CNT-to-counter gap of 2.2 p. It might imply that the emitting layer made of the high purity CNT powder can offer the higher performance in terms of the emission site density. Generally, the data switching voltage corresponds to about half the cathode-to-gate voltage required for fully on pixels. Therefore, the data switching voltage of cathode A would be less than 30 V, which means that low-cost data drivers can be adopted for the cathode structure. It is expected that the driving voltage could be reduced fnrther by increasing the number of CNT emitters per suhpixel.