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All‐solid‐state rechargeable thin‐film batteries were fabricated with the cell structure of Li / Lipon / LiMn 2 O 4 using sequential thin‐ film deposition techniques. Room‐temperature cycling of these cells showed a nearly constant potential of 4.0 V , good coulombic efficiency, and the capability of carrying high current density. Planar microbatteries were connected in series through metallization. High voltages of approximately 32 V could be realized by serial connection of eight unit cells. ©1999 The Electrochemical Society

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High performance poly-Si thin film transistors were fabricated by using a new crystallization method, Metal-Induced Lateral Crystallization (MILC). The process temperature was kept below 500°C throughout the fabrication. After the gate definition, thin nickel films were deposited on top of the TFT's without an additional mask, and with a one-step annealing at 500°C, the activation of the dopants in source/drain/gate a-Si films was achieved simultaneously with the crystallization of the a-Si films in the channel area. Even without a post-hydrogenation passivation, mobilities of the MILC TFT's were measured to be as high as 120cm2/Vs and 90cm2/Vs for n-channel and p-channel, respectively. These values are much higher than those of the poly-Si TFT's fabricated by conventional solid-phase crystallization at around 6001C.

Transparent, luminescent (Gd 2 O 3 :RE/SiO 2 ) thin films (RE = Eu and Tb) have been fabricated by annealing [RE-doped layered gadolinium hydroxide (LGdH:RE) nanosheet/SiO 2 nanoparticle] n films (n = the number of deposition cycles) deposited on a single quartz glass substrate by the layer-bylayer (LbL) assembly technique. To avoid energy transfer between different activator ions, which frequently occurs when multiple activator-doped LGdHs are used as precursor nanosheets, the emission colors of our oxide films were tuned by changing the mixing ratios of the individual LGdH:Eu and