In this work, we studied the effect of N 2 /H 2 plasma post-treatment on the film properties of TiCl 4 -based CVD TiN films. The N 2 /H 2 plasma post-treatment was found to strongly affect the resistivity and chlorine content of the TiN films. This effect became profound for films deposited after lowering the deposition temperature. The resistivity and the content of chlorine in the deposits could be reduced by about 70% and 30%, respectively, via the plasma treatment. However, there was no distinguishable effect of plasma post-treatment on the crystal structure of the TiN films.