A procedure based on the recently developed "adaptive" time-dependent density-matrix-renormalizationgroup (DMRG) technique is presented to calculate the zero temperature conductance of nanostructures, such as a quantum dots (QD's) or molecular conductors, when represented by a small number of active levels. The leads are modeled using non-interacting tight-binding Hamiltonians. The ground state at time zero is calculated at zero bias. Then, a small bias is applied between the two leads, the wave-function is DMRG evolved in time, and currents are measured as a function of time. Typically, the current is expected to present periodicities over long times, involving intermediate well-defined plateaus that resemble steady states. The conductance can be obtained from those steady-state-like currents. To test this approach, several cases of interacting and non-interacting systems have been studied. Our results show excellent agreement with exact results in the noninteracting case. More importantly, the technique also reproduces quantitatively well-established results for the conductance and local density-of-states in both the cases of one and two coupled interacting QD's. The technique also works at finite bias voltages, and it can be extended to include interactions in the leads.

The interplay between the Kondo effect and the inter-dot magnetic interaction in a coupled-dot system is studied. An exact result for the transport properties at zero temperature is obtained by diagonalizing a cluster, composed by the double-dot and its vicinity, which is connected to leads. It is shown that the system goes continuously from the Kondo regime to an anti-ferromagnetic state as the inter-dot interaction is increased. The conductance, the charge at the dots and the spin-spin correlation are obtained as a function of the gate potential.

Using exact-diagonalization techniques supplemented by a Dyson equation embedding procedure, the transport properties of multilevel quantum dots are investigated in the Kondo regime. The conductance can be decomposed into the contributions of each level. It is shown that these channels can carry a different phase, and destructive interference processes are observed when the phase difference between them is ±π. This effect is very different from those observed in bulk metals with magnetic impurities, where the phase differences play no significant role. The effect is also different from other recent studies of interference processes in dots, as discussed in the text. In particular, no external magnetic field is here introduced, and the hopping amplitudes dot-leads for all levels are the same. However, conductance cancellations induced by interactions are still observed. Another interesting effect reported here is the formation of localized states that do not participate in the transport. When one of these states crosses the Fermi level, the electronic occupation of the quantum dot changes, modifying the many-body physics of the system and indirectly affecting the transport properties. Novel discontinuities between two finite conductance values can occur as the gate voltage is varied, as discussed here.PACS numbers: