This paper describes a new anodic etching technique for the fabrication of device quality, self-limited, thin submicron semiconductor films. The technique relies upon the creation of a thin slightly damaged surface layer in the semiconductor by low dosage ion implantation. Evidence is presented to show that the lifetime of holes in this layer is drastically reduced causing the etching rate to decrease by a factor of several thousand when the damaged layer is exposed to the anodic etching solution.

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