Abstract-P-channel, backside illuminated silicon CCDs were developed and fabricated on high-resistivity n-type silicon. Devices have been exposed up to 1 × 10 11 protons/cm 2 at 12 MeV. The charge transfer efficiency and dark curent were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for long duration space missions.

We have developed a design for packaging Charged Coupled Devices (CCDs) for use as optical imaging devices for space applications, although the design is also useful for any large ground-based mosaic. We have constructed and assembled prototype packages using this design. Testing of these prototypes has demonstrated that these packaged CCDs are flight worthy. The design, construction, and testing of these prototypes are described in this article.