Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates Appl. Phys. Lett. 98, 173112 (2011); 10.1063/1.3584132 In islands and their conversion to InAs quantum dots on GaAs (100): Structural and optical properties J. Appl. Phys. 107, 014312 (2010); 10.1063/1.3269700 1.59 μ m room temperature emission from metamorphic In As ∕ In Ga As quantum dots grown on GaAs substrates Appl.In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that are typical of metamorphic InAs/InGaAs structures. The more relevant are: the cross-hatched InGaAs surface overgrown by dots, the change in critical coverages for island nucleation and ripening, the nucleation of new defects in the capping layers, and the redshift in the emission energy. The discussion on experimental results allowed us to conclude that metamorphic InAs/InGaAs quantum dots are rather different nanostructures, where attention must be put to some issues not present in InAs/GaAs structures, namely, buffer-related defects, surface morphology, different dislocation mobility, and stacking fault energies. On the other hand, we show that metamorphic quantum dot nanostructures can provide new possibilities of tailoring various properties, such as dot positioning and emission energy, that could be very useful for innovative dot-based devices.

We have prepared perpendicular hard/soft bilayers made of a 10nm L10-FePt layer, which has been epitaxially grown on MgO(100) and a Fe layer with thicknesses of 2 and 3.5nm. The control of the interface morphology allows to modify the magnetic regime at fixed Fe thickness (from rigid magnet to exchange-spring magnet), due to the nanoscale structure effect on the hard/soft coupling and to tailor the hysteresis loop characteristics. Despite the small thickness of the soft layer, the coercivity is strongly reduced compared to the hard layer value, indicating that high anisotropy perpendicular systems with moderate coercivity can be easily obtained.

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This paper presents a detailed study of structure, morphology, and magnetic properties in FePt thin films epitaxially grown on MgO(100) at intermediate temperatures (≅380°C). It focuses on the effects obtained by in situ annealing the FePt films after deposition. We have demonstrated that the annealing allows one to complete the ordering, thus obtaining an epitaxial L10-FePt film with large perpendicular anisotropy (up to 3×107erg∕cm3) and high perpendicular squareness and remanence ratio (both higher than 0.85). At the same time, we have found a peculiar morphology evolution by increasing the annealing time: the interconnected mazelike grains evolve towards interconnected dotlike grains of reduced size (down to 10nm). Due to the interconnection at the grains basis, the increase in the film perpendicular coercivity with the annealing process is moderate (up to 4.1kOe), leading to an increasing anisotropy/coercivity ratio with the annealing time. As a further step towards the understanding of the properties evolution with annealing, we have investigated the magnetic domain pattern and analyzed the domain-period dependence on the anisotropy constant in comparison with the behavior expected by the Kooy–Enz theory [C. Kooy and U. Enz, Philips Res. Rep. 15, 7 (1960)]. The main magnetic properties and reduced grain size obtained after the in situ annealing are promising to realize perpendicular recording media with reduced bit size, high thermal stability, and suitable switching field.

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