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Using high quality epitaxial layers, we h a ve obtained direct evidence of the band inversion in the P b 1,x Sn x T esystem. The samples, covering the whole composition range, were grown by molecular beam epitaxy on 111 BaF 2 substrates. A minimumin the resistivity as a function of temperature was observed for all samples with Sn composition 0:35 x 0:70. In the same samples and at the same temperature, temperature dependent optical transmission measurements have revealed a change in signal of the energy gap temperature derivative, a direct evidence of the band inversion. However, the temperature for which the inversion occurs is not the one expected by the band inversion model. This discrepancy is supposed to be due to the Burstein-Moss shift caused by the relatively high hole concentration observed in these samples.