This paper provides new insight on traveling wave phenomena, along the transverse direction, in field effect transistors. Specially designed structures are proposed, either in single gate form or in dual gate form, which allow overcoming inherent limitations due to gate losses and realizing on-chip wideband amplifiers. Demonstration of these capabilities is done using testing and modeling procedures based on distributed equivalent circuits.

This paper provides a new possibility of realizing in chip form wideband amplifiers with simple wide gate field effect structures, by taking advantage of especially designed electrode terminations to overcome inherent traveling wave losses. Demonstration of these properties is performed through various realizations and is based on distributed equivalent circuit modelling.

2014 Nous présentons une étude des potentialités en amplification d'une structure MESFET AsGa bigrille distribuée, avec entrée sur la grille G1, sortie sur la grille G2, le drain étant découplé à la masse. Une modélisation, utilisant le logiciel Spice, permet d'examiner, successivement, les influences des impédances terminales, du développement, des pertes et de la polarisation des lignes de grilles. Une comparaison avec la structure monogrille distribuée est donnée. Enfin, la faisabilité du dispositif amplificateur est établie par des essais pratiqués sur une première réalisation. Abstract. 2014 We present a study on the amplification capabilities of a GaAs distributed dual-gate MESFET structure, with the gate G1 as input and the gate G2 as output, the drain electrode being R.F. grounded. A model, based on the Spice program, allows us to investigate, successively, the influences of the termination impedances, the width, the losses and the bias conditions of the gate lines. A comparison with the single gate distributed structure is reported. Lastly, the device feasability is demonstrated through measurements carried out from a first realization.