The output enhancement of a green InGaN/GaN quantum-well (QW) light-emitting diode (LED) through the coupling of a QW with localized surface plasmons (LSPs), which are generated on Ag nanostructures on the top of the device, is demonstrated. The suitable Ag nanostructures for generating LSPs of resonance energies around the LED wavelength are formed by controlling the Ag deposition thickness and the post-thermal-annealing condition. With a 20 mA current injected onto the LED, enhancements of up to 150% in electroluminescence peak intensity and of 120% in integrated intensity are observed. By comparing this with a similar result for a blue LED previously published, it is confirmed that surface plasmon coupling for emission enhancement can be more effective for an InGaN/GaN QW of lower crystal quality, which normally corresponds to the emission of a longer wavelength.

We consider the impact of high-order surface plasmon modes supported by the metal nanoparticles on the efficiency enhancement of optical emission. Using the example of Au nanosphere embedded in the GaN dielectric, we show that for an emitter with certain original radiative efficiency, placing the emitter too close to the metal sphere does not always produce additional enhancement. Thus our model provides analytical treatment of the luminescence quenching and can be used to optimize both nanoparticle size and its separation from the emitter to yield maximum enhancement.

The authors demonstrate the coupling effects between the quantum well ͑QW͒ and surface plasmon ͑SP͒ generated nearby on the p-type side in an InGaN / GaN single-QW light-emitting diode ͑LED͒. The QW-SP coupling leads to the enhancement of the electroluminescence ͑EL͒ intensity in the LED sample designed for QW-SP coupling and reduced SP energy leakage, when compared to a LED sample of weak QW-SP coupling or significant SP energy loss. In the LED samples of significant QW-SP coupling, the blueshifts of the photoluminescence and EL emission spectra are observed, indicating one of the important features of such a coupling process. The device performance can be improved by using the n-type side for SP generation such that the device resistance can be reduced and the QW-SP coupling effect can be enhanced ͑by further decreasing the distance between the QW and metal͒ because of the higher carrier concentration in the n-type layer.

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