Topological Dirac semimetals (TDSs) represent a new state of quantum matter recently discovered that offers a platform for realizing many exotic physical phenomena. A TDS is characterized by the linear touching of bulk (conduction and valance) bands at discrete points in the momentum space (i.e. 3D Dirac points), such as in Na3Bi and Cd3As2. More recently, new types of Dirac semimetals with robust Dirac line-nodes (with non-trivial topology or near the critical point between topological phase transitions) have been proposed that extends the bulk linear touching from discrete points to 1D lines. In this work, using angle-resolved photoemission spectroscopy (ARPES), we explored the electronic structure of the non-symmorphic crystals MSiS (M=Hf, Zr). Remarkably, by mapping out the band structure in the full 3D Brillouin Zone (BZ), we observed two sets of Dirac line-nodes in parallel with the kz-axis and their dispersions. Interestingly, along directions other than the line-nodes in the 3D BZ, the bulk degeneracy is lifted by spinorbit coupling (SOC) in both compounds with larger magnitude in HfSiS. Our work not only experimentally confirms a new Dirac line-node semimetal family protected by nonsymmorphic symmetry, but also helps understanding and further exploring the exotic properties as well as practical applications of the MSiS family of compounds.

The quantum spin Hall (QSH) effect is widely studied as a novel quantum state in condensed matter physics over the past decade. Recently, it is predicted that the transition metal pentatelluride XTe5 (X = Zr, Hf) has a large bandgap in its bulk form and a single layer of XTe5 is a QSH insulator candidate. However, the topological nature of the bulk material is still under debate because it is located close to the phase boundary of a strong topological insulator and a weak topological insulator (WTI). Here, using angle-resolved photoemission spectroscopy and scanning tunneling microscopy (STM)/scanning tunneling spectroscopy, we systematically studied the electronic structures of bulk HfTe5. Both the large bulk bandgaps and conductive edge states in the vicinity of the step edges in HfTe5 were observed, strongly suggesting a WTI phase in bulk HfTe5. Moreover, our STM experiment for the first time reveals the bulk band bending due to the broken symmetry near the step edge, making it an ideal platform for studying the development of edge states in the WTI and QSH insulator.

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