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A simple method has been developed to measure the localized hot carrier damage in scaled thin-gate MOSFET's. Lateral distributions of both interface traps and oxide charge can be derived directly from experimental charge pumping results without numerical simulation.

A two-step erase algorithm for Fllash EPROM, consisting of a source-side erase and a subsequent source-side soft channe:l hot-electron injection, will be described. The second step is designed to neutralize the GIDL-induced trapped holes during the first step. Experimental results show that the two-step algorithm greatly reduces the wordline disturb problem and achieves threshold voltage convergence. improvement on the subsequent gate leakage as well as word-line disturb probldms. It also promotes threshold convergence.In some sense, our two-step erase algorithm is conceptually similar to the one proposed in [3], except that in [3] the era. e operation is accomplished by Fowler-Nord eim injection over the entire gate region, while in our case the erase current is confined near the source junction. Figure 1 shows the h

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