We have optimized 3 key RF devices realized in standard logic 90 nm CMOS technology and report a record performance in terms of n-MOS maximum oscillation frequency fmaz (280 GHz), varactoi tuning range and varactor and inductor quality factor. gration design rules the source and drain interconnect is made wider than the minimum design rule and realized in the metal levels 2, 3, and 4. For characterization. several of these unit cells are placed in parallel to achieve a total width of 120 pm. Figs. 2 and 3 illustrate the standard extraction of the RF figures of merit f~ and fmo. from measurements of the current gain H21 and Mason's gain (U), taken up to 110 GHz, where all in-17.6.1

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