GaAs/(Ga,Al)As/GaAs transmission photocathodes were fabricated by a multiple layer liquid epitaxy technique using GaAs substrates. The GaAs substrate was subsequently removed by bubble etching. Transmission mode white light sensitivity of 340 μA/lm and an electron diffusion length of 5 μm or more can be routinely achieved. The reflection sensitivity was found to be lower than that of a similarly prepared layer grown directly on the GaAs substrate. The spectral response, when analyzed with the yield formula, indicated negligible recombination at the GaAs / (Ga,Al)As interface. Also, despite the almost perfect lattice match between GaAs and AlAs, some bowing of the GaAs / (Ga,Al)As samples was observed, suggesting the presence of internal stresses. A simplified formula is derived for the transmission quantum yield which enables graphic solution of surface recombination velocity at the photocathode input surface and the ratio of photocathode thickness to the electron diffusion length without tedious computer calculations.

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Articles you may be interested inStudy of a microprocessor-based technique for improving the uniformity of a field-emission flat-panel display A technique for measuring, displaying, recording, and modifying the spatial uniformity of implanted ions A contour plotter has been designed to display the sensitivity uniformity of photocathodes in quantized format on the Z axis of an oscilloscope. An optical scanner, synchronously driven by the oscilloscope X-Y deflection signals is used to raster scan the photocathode with a focused light beam. Sensitivity, resolution, and scanning time are sufficient to use the plotter to monitor sequential processing steps for photocathodes in demountable, ultrahigh vacuum systems. A general description of the contour plotter system and a detailed circuit description are given. An example relating to cesium uniformity on a III-V photocathode is presented to illustrate the use of the contour plotter.