Dynamical response of surface metallic states in single crystalline ultrathin Bi(001) films on Si(111) 7 Â 7 surface was investigated at a spectral range of 0.1-12 THz by broadband terahertz time-domain spectroscopy. The observed transmittance increased with a decrease in the thickness, without showing a gap structure. The measured complex dielectric dispersion was analyzed using a Drude model, and the plasma frequency (x p) and damping constant (c) were found to be inversely proportional to the thickness. The results strongly indicate the existence of surface metallic states, whose carrier density and damping constant are estimated to be 3.08 Â 10 19 cm À3 and 4.83 Â 10 2 THz, respectively. V

A WO3 thin film electrode containing a BiOI/WO3 heterojunction was constructed using simple hydrothermal and electrodeposition methods. This study provides a novel theoretical basis for the development of high performance WO3 photocatalytic materials.

Josephson circuit designs often place tight tolerance requirements on the junction critical current values. In manufacturing Josephson junctions to pre-specified critical and photolithographic size is important. We present a language to describe critical current reproducibility and reproducibility using a database of a thousand individual Josephson junctions in addition to junction arrays, manufactured over many months in the TRw superconducting electronics process line. We measure less than 2 percent (lo) spread critical currents for 10 micrometer junctions. Fig. 1. Similarly, junction current density may deviate from designed values. The equations current, accurate control over both wafer critical current density Jc = Jc, ("JA (2) uniformity. We have statistically analyzed junction d = ddesign + d~ (3)define a total fraCtiOna1 Critical CLUrent density departure frOm design, JA> and a total dimensional departure frOm design, dA.

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