An important strategy for realizing flexible electronics is to use solution-processable materials that can be directly printed and integrated into high-performance electronic components on plastic. Although examples of functional inks based on metallic, semiconducting and insulating materials have been developed, enhanced printability and performance is still a challenge. Printable high-capacitance dielectrics that serve as gate insulators in organic thin-film transistors are a particular priority. Solid polymer electrolytes (a salt dissolved in a polymer matrix) have been investigated for this purpose, but they suffer from slow polarization response, limiting transistor speed to less than 100 Hz. Here, we demonstrate that an emerging class of polymer electrolytes known as ion gels can serve as printable, high-capacitance gate insulators in organic thin-film transistors. The specific capacitance exceeds that of conventional ceramic or polymeric gate dielectrics, enabling transistor operation at low voltages with kilohertz switching frequencies.
The charge transport mechanism of a wire can be revealed by how its electrical resistance varies with length. We have measured the resistance and current-voltage characteristics of conjugated molecular wires ranging in length from 1 to 7 nanometers, connected between metal electrodes. We observe the theoretically predicted change in direct-current transport from tunneling to hopping as a function of systematically controlled wire length. We also demonstrate that site-specific disruption of conjugation in the wires greatly increases resistance in the hopping regime but has only a small effect in the tunneling regime. These nanoscale transport measurements elucidate the role of molecular length and bond architecture on molecular conductivity and open opportunities for greater understanding of electrical transport in conjugated polymer films.
The development of new organic semiconductors with improved performance in organic thin film transistors (OTFTs) is a major challenge for materials chemists. There is a particular need to develop air-stable n-channel (electron-conducting) organic semiconductors with performance comparable to that of p-channel (hole-conducting) materials, for organic electronics to realize the benefits of complementary circuit design, i.e., the ability to switch transistors with either positive or negative gate voltages. There have been significant advancements in the past five years. In terms of standard OTFT metrics such as the field effect mobility (µ FET ) and on-to-off current ratio (I ON /I OFF ), n-channel OTFTs have achieved performance comparable both to that of n-channel amorphous silicon TFTs and to that of the best reported p-channel (hole-conducting) OTFTs; however, issues of device stability linger. This review provides a detailed introduction to OTFTs, summarizes recent progress in the development of new n-channel organic semiconductors, and discusses the critical properties that any prospective n-channel material must have. Methods important to semiconductor design such as electronic structure calculations and synthetic structural modifications are highlighted in a case study of the development of a new n-channel material based on a terthiophene modified with electron-withdrawing groups. The review concludes with a discussion of directions for future work in this area.
We compile, compare, and discuss experimental results on low‐bias, room‐temperature currents through organic molecules obtained in different electrode–molecule–electrode test‐beds. Currents are normalized to single‐molecule values for comparison and are quoted at 0.2 and 0.5 V junction bias. Emphasis is on currents through saturated alkane chains where many comparable measurements have been reported, but comparison to conjugated molecules is also made. We discuss factors that affect the magnitude of the measured current, such as tunneling attenuation factor, molecular energy gap and conformation, molecule/electrode contacts, and electrode material.
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