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Tunnel magnetoresistance ratios of up to 40% are measured between 10 K and 300 K when the highly spin-polarized compensated ferrimagnet, Mn2RuxGa, is integrated into MgO-based perpendicular magnetic tunnel junctions. Temperature and bias dependences of the tunnel magnetoresistance effect, with a sign change near −0.2 V, reflect the structure of the Mn2RuxGa interface density of states. Despite magnetic moment vanishing at a compensation temperature of 200 K for x≈0.8, the tunnel magnetoresistance ratio remains non-zero throughout the compensation region, demonstrating that the spin-transport is governed by one of the Mn sub-lattices only. Broad temperature range magnetic field immunity of at least 0.5 T is demonstrated in the same sample. The high spin polarization and perpendicular magnetic anisotropy make Mn2RuxGa suitable for applications in both non-volatile magnetic random access memory cells and terahertz spin-transfer oscillators.

Narrow-band terahertz emission from coherently excited spin precession in metallic ferrimagnetic Mn3-xGa Heusler alloy nanofilms has been observed. The efficiency of the emission, per nanometer film thickness, is comparable or higher than that of classical laser-driven terahertz sources based on optical rectification. The center frequency of the emission from the films can be tuned precisely via the film composition in the range of 0.20–0.35 THz, making this type of metallic film a candidate for efficient on-chip terahertz emitters. Terahertz emission spectroscopy is furthermore shown to be a sensitive probe of magnetic properties of ultra-thin films.

Data are presented which indicate a modification of magnetic anisotropy in the MgO/CoFeB/Pd and MgO/CoFeB/Pt systems, using electric fields of order 500 MV m−1 (0.5 V nm−1) applied across a thermally grown SiO2 as a gate dielectric. The effect is most prominent at low temperature (12 K) and is manifested as a small change in coercivity. The sign of the effect depends on the choice of both capping layer and annealing temperature. The results suggest that both interfaces play a role in the appearance of perpendicular magnetic anisotropy in these thin-film stacks, and not just the interface with MgO.

Perpendicular magnetic anisotropy is observed in ultrathin ( 0.6 nm) amorphous Co 40 Fe 40 B 20 when sputtered on an MgO (001) buffer layer and capped with Pd. The layers are superparamagnetic with a blocking temperature of 230 K, below which they show an exponential temperature dependence of coercivity. Perpendicular magnetic anisotropy is observed in the as-deposited state and the mechanism is different from that of CoFeB/Pt, which requires postannealing. These ultrathin layers could be a model system for studies of electric field effects on magnetic anisotropy.Index Terms-Perpendicular magnetic anisotropy (PMA), thin-film capacitors.