This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n ++ -p + -p structure, where the doping profile of the p + layer is optimized to achieve high field and high impact ionization at the junction.The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.

The performance of planar silicon pixel sensors, in development for the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades, has been examined in a series of beam tests at the CERN SPS facilities since 2009. Salient results are reported on the key parameters, including the spatial resolution, the charge collection and the charge sharing between adjacent cells, for different bulk materials and sensor geometries. Measurements are presented for n + -in-n pixel sensors irradiated with a range of fluences and for ptype silicon sensors with various layouts from different vendors. All tested sensors were connected via bump-bonding to the ATLAS Pixel read-out chip.The tests reveal that both n-type and p-type planar sensors are able to collect significant charge even after the lifetime fluence expected at the HL-LHC. 5

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High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ω•cm were irradiated with neutrons up to a fluence of 2×10 16 n eq /cm 2 and characterized using edge-TCT. It was found that, within the measured fluence range, the active region and the collected charge reach a maximum at about 7×10 15 n eq /cm 2 to decrease to the level of the unirradiated detector after 2×10 16 n eq /cm 2 . K: Radiation-hard detectors; Radiation damage to detector materials (solid state); Hybrid detectors; Radiation-hard electronics 1Corresponding author.

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