A general deembedding procedure using one "OPEN" and two "THRU" dummy structures for noise and scattering parameter deembedding based on cascade configurations is presented in this paper. This technique does not require any equivalent-circuit modeling of probe pads or interconnections. This deembedding procedure is valid for designs having interconnections with any kinds of geometries and for devices operated at frequencies of several tens of gigahertz.

Noise sources of 70-nm NMOS transistors the model by presenting a noise parameter simulation of were extracted to reveal the channel noise is dominant up to MOS transistors. 26 GHz. Gate induced noise increased in proportion to , however, its level was 1 to 2 orders of magnitude lower than II. NOISE PARAMETER MEASUREMENT the channel noise. A new approach to accurately capturing In this study, ATN NP-5 (from 0.5 to 6 GHz) and the behavior of thermal noise by compensating for the Maury ATS (from 4 to 26 GHz) systems were used for discrepancy between extracted and simulated channel noise noise parameter (NFmin, Rn, Fopt) measurement. NMOS through the addition of an excess noise source was l-, , Xdemonstrated. The excess noise source was incorporated into transistors with physical gate lengths of 70 nm and fixed our RFMOS model, which enabled us to accurately simulate finger width of 2.5 pm were characterized by the systems. noise parameters. By using this technique the noise figure ofThe total gate width, Wtotai, was varied from 10 to 160 ptm.