Articles you may be interested inHigh frequency and noise model of gate-all-around metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 105, 074505 (2009); 10.1063/1.3093884 High-frequency compact analytical noise model for double-gate metal-oxide-semiconductor field-effect transistor J. Appl. Phys. 105, 034510 (2009); 10.1063/1.3077279Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal-oxide-semiconductor field-effect transistors Appl.Origin of microwave noise from an n-channel metal-oxide-semiconductor field effect transistor J. Appl. Phys. 92, 6679 (2002); 10.1063/1.1518763Direct extraction of the channel thermal noise in metal-oxide-semiconductor field effect transistor from measurements of their rf noise parameters This article presents, for the first time, a method to directly calculate the noise parameters ͑minimum noise figure NF min , equivalent noise resistance R n , and optimized source resistance R opt and reactance X opt ͒ of metal-oxide-semiconductor field effect transistors based on the HSPICE level 3 model because all the model parameters are available from the manufacturer of our device-under-test. All physically based high frequency noise sources, thermal noise from the channel, gate, source and drain resistances, induced gate noise, and the correlation among them, are considered, and the impact of gate resistance and induced gate noise on the noise parameters is studied. The method of direct calculation of noise parameters can be applied to any sophisticated small-signal device model.