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Postnatal depression has been associated with mother–infant relationship difficulties, but there has been less research in clinical populations. This study aims to identify characteristics of reported mother–infant relationship difficulties in mothers with postnatal depression who had been referred to a tertiary Mother and Baby Service. Forty‐one mothers with postnatal depression completed self‐report and interview measures with regards to their mental state, social adversity, and perceptions on their relationship with their infants. Almost one‐third of mothers (31.7%) reported severe difficulties, including rejection of the infant and maternal pathological anger. A low birth weight and maternal dissatisfaction towards their social role were found to be significantly related to perceived mother–infant interaction difficulties. Self‐reports correlated satisfactorily with interview schedules. A significant proportion of mothers reported difficulties in relating to their infants which can be reliably identified by means of the self‐report measures used. Copyright © 2004 John Wiley & Sons, Ltd.

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We found that tensile stress actually increases both the on current and the subthreshold off current for n-channel metal-oxide-semiconductor transistors because of an increase in mobility. Our theory is that stress engineering works because the increase in the subthreshold off current can be easily offset by a slight increase in the saturation threshold voltage, while the increase in the on current can be offset only by a much larger increase in the saturation threshold voltage. In this paper, experimental variation in the saturation threshold voltage is achieved by the statistical variation in gate length and short-channel effect. Thus, the overall effect is an improvement.

The authors found that tensile stress actually slightly increases the on current and the subthreshold off current but it slightly decreases the gate leakage current and the drain junction leakage current for n-channel metal-oxide-semiconductor transistors. For short transistors, the subthreshold off current dominates over the other two components of the off current such that tensile stress slightly increases both the on current and the off current. However, in the on current versus the logarithm of off current plot, tensile stress increases the on current for a constant off current such that the overall effect of tensile stress is an improvement.