The mechanism of copper deposition by direct plating on a nonconductive substrate has been investigated. Studies using electron spectroscopic chemical analysis show that the immersion of a sodium sulfide solution does lead to the formation of palladium sulfide. Sulfide acts as a bridging ligand; it can increase the speed of direct plating dramatically. Compounds with similar bridging property were later found to show the same promotion effect in the direct plating process. These compounds include thiourea, sodium thiocyanate, potassium iodide, and sodium cyanide. It was also found that the addition of these compounds could cause a shift of the rest potential. In addition, copper was found to partially dissolve if the current was interrupted. These phenomena can all be explained by the proposed mechanism.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-15 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-15 to IP

This investigation is concerned with the variation of current efficiency under pulse current conditions. The parameters involve the pulse current density, the on-time, and the off-time. When the on-time is shorter than a critical pulse time, the efficiency drops noticeably. A model based on successive charge transfer steps and a side reaction is proposed to explain the experimental observations.

The effect of consolidation pressure and crystallite size of powders crystal phases of TiOz on sintered microstructure of TiO2 ceramics doped with 0.25 mol % Nb and 1.0 mol % Ba were investigated. Also, the development sequence of abnormal grain growth of (niobium, barium) doped Ti02 ceramics was proposed. The second phases of as-sintered surface were determined. The dielectric properties of Ag-electroded samples were correlated with the resistivity of the bulk (Nb, Ba) doped TiO 2 ceramics. Abnormal grain growth lowered the resistivity of bulk material of (Nb, Ba) doped TiO2 ceramics, and moved the relaxation frequency of tan 6 to high frequency region over 105 Hz. Controlling the sintered microstructures can obtain reasonably good dielectric properties.

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Heteroepitaxial diamond has been successfully deposited on a Si(110) substrate by the microwave plasma chemical vapor deposition method. The pretreatment consisted of carburization and bias-enhanced nucleation steps. Cross-sectional transmission electron microscopy reveals that diamond can be in the cube-on-cube epitaxial relationship with the Si substrate. Various orientation relationships between diamond and Si substrates have also been observed, depending on the location where the plasma applied. Near the center of the plasma, twins were rarely observed in cube-on-cube epitaxial regions. Away from the center of the plasma ball, S3 twins are seen first, and then additional S9 and S27 twins occur near the edge of the plasma. In general, defect density in the epitaxial films is less than that observed in polycrystalline ones. No interlayer could be observed between diamond and silicon. In addition, 2H-type hexagonal diamond has also been found, and is in epitaxy with the Si substrate.