Silicon dioxide ( SiO2) films have been successfully deposited on indium phosphide (InP) substrate at low temperature and low pressure by direct photo-enhanced chemical vapor deposition (photo-CVD) under irradiation by a deuterium lamp. Silane ( SiH4) and oxygen ( O2) are used as reactant sources. The measurements of Fourier transform infrared (FTIR), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) show that the dominant components of the oxide are silicon and oxygen and the film is SiO2. Metal-oxide-semiconductor (MOS) capacitors show sharp interfaces with densities of states in the range of 1.2×1011 cm-2 eV-1. N-channel depletion-mode InP metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated with a transconductance of 63 mS/mm for 2 µ m gate length and an effective channel mobility as high as 1140 cm2 V-1 s-1. High-frequency S-parameter measurements of microwave characteristics for the devices indicate a current-gain cutoff frequency f t=6.3 GHz.

Articles you may be interested inNanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals On the mobility of nchannel metal-oxide-semiconductor transistors prepared by lowpressure rapid thermal chemical vapor deposition Appl. Phys. Lett. 66, 73 (1995); 10.1063/1.114149 Study of indium antimonide metaloxidesemiconductor structure prepared by direct photochemicalvapor deposition J. Appl. Phys. 76, 4719 (1994); 10.1063/1.357265 InSb pchannel metaloxidesemiconductor fieldeffect transistor prepared by photoenhanced chemical vapor deposition Appl.Thin oxynitride film metaloxidesemiconductor transistors prepared by lowpressure rapid thermal chemical vapor deposition Appl.High quality SiO 2 layers have been grown on ͑111͒ Si substrates by direct photoenhanced chemical vapor deposition using monosilane ͑SiH 4 ͒ and oxygen ͑O 2 ͒ as gas sources under irradiation of a deuterium lamp. The refractive index of the deposited oxide is 1.462 at 250°C when the gas ratio ͑O 2 /SiH 4 ͒ is 5. The measurements of the Fourier transform infrared spectrum, x-ray photoelectron spectroscopy, and Auger electron spectroscopy show that the dominant components of the oxide are silicon and oxygen and the film is SiO 2 . Hysteresis free capacitance-voltage characteristics of the metal-oxide-semiconductor diode was observed. After low temperature postoxidation annealing, the minimum interface trap density is 1.5ϫ10 11 cm Ϫ2 eV Ϫ1 , which is comparable to that of thermal oxidation.

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