Articles you may be interested inGaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics Appl. Phys. Lett. 105, 043105 (2014); 10.1063/1.4891557Growth of InGaAsP based asymmetric quantum well infrared photodetector using metalorganic vapor phase epitaxy

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We demonstrate quantum well infrared photodetectors based on a GaAs/Ga0.51In0.49P superlattice structure grown by gas-source molecular beam epitaxy. Wafers were grown with varying well widths. Wells of 40, 65, and 75 Å resulted in peak detection wavelengths of 10.4, 12.8, and 13.3 μm with a cutoff wavelength of 13.5, 15, and 15.5 μm, respectively. The measured peak and cutoff wavelengths match those predicted by eight band theoretical analysis. Measured dark currents were lower than equivalent GaAs/AlGaAs samples.