We report the first organic-on-inorganic contact barrier semiconductor transistor. InP field-effect transistor similar to metal-semiconductor field-effect transistors was made by vacuum subliming a thin film of N, N′-dimethyl 3,4,9,10-perylenetetracarboxylic diimide onto Si-implanted channel, forming a gate contact. Good pinch-off characteristics and relatively small gate leakage current were obtained. The extrinsic transconductances for these devices are approximately 70–80 mS/mm, with a gate length of 1.5 μm and a channel carrier concentration in the high 1016 cm−3.

Rapid thermal annealing of elevated-temperature Si implants in InP is shown to result in higher donor activation and electron mobility with lower-temperature–shorter-anneal cycles than for room-temperature implants. The reduced cycles (temperature below 800 °C with times of ∼10 s) also result in process simplification with negligible thermal surface degradation and insignificant Si diffusion. The results are demonstrated with a dual-energy implant scheme applicable to field-effect transistors and with a single-energy heavy-dose implant useful for achieving low-resistance ohmic contacts.

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