Micro‐photoluminescence studies on single InGaN/AlGaN quantum dots grown by metal‐organic vapor phase epitaxy, measured in dependence on an external electric field, are presented by Zakizade et al. (article no. http://doi.wiley.com/10.1002/pssb.201600325). These quantum dots possess an additional AlGaN layer as bottom barrier. The resulting carrier confinement allows for the observation of excitonic emission lines up to 100 K. The quantumconfined Stark effect is tested by applying a vertical electric field via metal contacts and detecting the single‐quantum‐dot emission at metal apertures. The application of an electric field parallel to the growth direction of the sample can compensate the internal electric field. The authors' experiments indicate the action of this effect by a blue shift of the single quantum dot emission due to the enhanced overlap between the electron and hole wave functions further resulting in the observed increase of the PL intensity. Additionally, the investigation of the biexcitonic binding energy in dependence on the external field demonstrates that the partial compensation of the internal field results in an increase of the biexciton binding energy and influences the intensity of its emission.

We report on micro‐photoluminescence studies on InGaN/ AlGaN quantum dots grown by metal‐organic vapor phase epitaxy. The excitonic emission lines can be observed up to 100 K. Investigations of the quantum‐confined Stark effect in dependence on an external electric field show a partial compensation of internal fields and an enhancement of the overlap between electron and hole wave function in the quantum dots. As a consequence, an increase of the PL intensity and a blue shift of the single‐quantum‐dot emission line is observed. Furthermore, we show how the internal electric field strongly affects the photoluminescence intensity of the emission line up to 40 K. In addition, by investigating the excitonic and biexcitonic states, we demonstrate that the partial compensation of the internal field increases the biexciton binding energy and influences the intensity of its emission.