No abstract

Approaches to thinning and superstrate support. This paper reports the continued development at EEV of ultrathin (6pm) GaAs solar cells (UTCs) for application in space. Previously, we reported the development of 20 x 20 mm GaAs UTCs, made by the etchback or sacrificial substrate technique [I], with efficiencies up to 19.7% (1 sun AM0 aperture area). Further, we have reported [2] the use of direct, adhesive-free cover-glass bonding to enhance the strength of the device. The etch-back technique has been further developed, to larger area and multiple cells mounted on a single superstrate coverglass.The relative merits and disadvantages of three different techniques used to produce UTCs (CLEFT, PEEL, and sacrificial substrate) are discussed. Potential applications for UTCs are considered with the effects and requirements of the technology.

Due to its direct bandgap and high optical absorption coefficient, GaAs offers the potential for ultrathin (< 10 micron) solar cells. Such cells have a very high output power per unit mass, and applications both as single junction cells and as top cells to mechanically stacked multijunction cells.This paper reports the development of ultrathin GaAs solar cells, with results up to 20% AM0 1 sun, based on conventional coverglass and interconnect techniques.Direct (glueless) bonding of coverglass to GaAs materials and cells will also be reported. To achieve a direct bond, an electric field is placed across the cell and coverglass, whilst they are held in compression at elevated an temperature. Progress towards developing a directly glassed, ultrathin GaAs solar cell will be reported.

No abstract

No abstract