No abstract

A wide-bandwidth GaAs MESFET operational amplifier is reported, with a 65-dB dc gain and a 20 GHz gain-bandwidth product at 500 MHz. The circuit employs a variety of local feedback techniques to enhance the overall gain. The use of an undoped GaAs buffer, grown at a relatively low temperature ( --300°C), eliminates backgating and light sensitivity. The circuit was fabricated in an 80-GHz fr MESFET process, with 0.2-pm electron-beam defined gates.

No abstract

No abstract

No abstract