The mobility and carrier concentration of a number of InSb-based modulation-doped quantum well heterostructures are examined over a range of temperatures between 4.5 and 300 K. Wide well ͑30 nm͒ and narrow well ͑15 nm͒ structures are measured. The temperature dependent mobilities are considered within a scattering model that incorporates polar optical and acoustic phonon scatterings, interface roughness scattering, and scattering from charged impurities both in the three-dimensional background and within a distributed "quasitwo-dimensional" doping layer. Room temperature mobilities as high as 51 000 cm 2 / V s are reported for heterostructures with a carrier concentration of 5.8ϫ 10 11 cm −2 , while low-temperature mobility ͑below 40 K͒ reaches 248 000 cm 2 / V s for a carrier concentration of 3.9ϫ 10 11 cm −2. A Schrödinger-Poisson model is used to calculate band structures in the material and is shown to accurately predict carrier concentrations over the whole temperature range. Low-temperature mobility is shown to be dominated by remote ionized impurity scattering in wide well samples and by a combination of ionized impurity and interface roughness scattering in narrow well samples.

A method is developed for extracting the coupling and loss coefficients of ring resonators from the peak widths, depths, and spacings of the resonances of a single resonator. Although the formulas used do not distinguish which coefficient is coupling and which is loss, it is shown how these coefficients can be disentangled based on how they vary with wavelength or device parameters.

This paper reports on the electrochemistry of a new series of layered manganese oxide cathodes for lithium-ion cells. The layered structure is stabilized by the partial substitution of the manganese by chromium and lithium atoms and by the partial or complete oxidation of the manganese to the 4 oxidation state. The series covers the range of compositions Li x Cr y Mn 2Ày O 4z for which 2:2 < x < 4, 0 < y < 2 and z ! 0.

No abstract