No abstract

No abstract

No abstract

Ge 2 Sb 2 Te 5 ) 100ÀX Ag X films (where x ¼ 0 $ 3 at.%) with 100 nm thickness were deposited on natural-oxidized silicon wafer and glass substrates by dc magnetron co-sputtering of Ge 2 Sb 2 Te 5 and Ag targets. The effects of Ag content on the optical properties of the (Ge 2 Sb 2 Te 5 ) 100ÀX Ag X film were examined by X-ray diffraction, reflectivity and crystalline temperature analysis. It was found that the reflectivity and thermal properties of the Ge 2 Sb 2 Te 5 film could be improved by doping a small amount of Ag in the Ge 2 Sb 2 Te 5 film. The crystallization activity energy of the film decreased as the Ag content was increased. However, the crystalline temperature of the film increased with Ag content. The phase-transition temperature of the fcc to hcp phase increased to at least 450 C as x > 0:3. We found that the contrast of (Ge 2 Sb 2 Te 5 ) 98:2 Ag 1:8 film is suitable for blue laser wavelength recording.

No abstract