Pixel detectors at HL-LHC experiments or other future experiments are facing new challenges, especially in terms of unprecedented levels of radiation and particle flux. This paper describes the progress made by the CHIPIX65 project of INFN for the development of a new generation readout ASIC using CMOS 65 nm technology.

We report on a high-energy solid-state laser based on a master-oscillator power-amplifier system seeded by a 5-GHz repetition-rate mode-locked oscillator, aimed at the excitation of the dynamic Casimir effect by optically modulating a microwave resonator. Solid-state amplifiers provide up to 250 mJ at 1064 nm in a 500-ns (macro-)pulse envelope containing 12-ps (micro-)pulses, with a macro/micropulse format and energy resembling that of near-infrared free-electron lasers. Efficient second-harmonic conversion allowed synchronous pumping of an optical parametric oscillator, obtaining up to 40 mJ in the range 750-850 nm.

A: This paper is a review of recent progress of RD53 Collaboration. Results obtained on the study of the radiation effects on 65 nm CMOS have matured enough to define first strategies to adopt in the design of analog and digital circuits. Critical building blocks and analog very front end chains have been designed, tested before and after 5-800 Mrad. Small prototypes of 64 × 64 pixels with complex digital architectures have been produced, and point to address the main issues of dealing with extremely high pixel rates, while operating at very small in-time thresholds in the analog front end. The collaboration is now proceeding at full speed towards the design of a large scale prototype, called RD53A, in 65 nm CMOS technology.