We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.

In this paper, we report the possibility of achieving sub-kT/q subthreshold slope (i.e. lower than 59.6 mV/decade at T=300K) without using either impact ionization or band-toband tunneling. The device uses intraband tunneling within the conduction band through barriers whose shape varies with the applied gate voltage. Subthreshold slope as low as 56.5 mV/decade is reported at T=300K. The VBT reported here breaks the 60mV/dec barrier over more than five decades of subthreshold current, which is the highest current range reported so far.