Based on the Tersoff potential, we have investigated the effects of dislocations on the crystal growth rate of Si (110) rough interface by a molecular dynamics simulation. The atomic structures show that, the (110) interface morphology with a 0 90 dislocation keeps flatness similar to that of dislocation-free. However, the interface with a 0 60 dislocation contains a type of "V" groove, which is formed gradually around the outcrop of the dislocation. The results of the crystal growth rate exhibit that the 0 60 dislocation prevents the crystal growth of Si, while the 0 90 dislocation has a little influence on the crystal growth rate. The relationship between the dislocation and the crystal growth rate should relate to the difference of interface morphologies.