This article describes the design of a microstrip patch antenna with radiation pattern reconfigurable characteristic, where two monolithically integrated MEMS switches are utilized. By changing the physical dimension of the antenna, its radiation pattern could be changed. Moreover, we present detailed structures of these RF MEMS switches, whose isolation and insertion loss are-23.12 dB and-0.09 dB at operating frequency, respectively. And the resonant frequency of the antenna is 35.4 GHz and the bandwidth is 6.69%. All the results are simulated.

In this paper, the design, optimization and equivalent circuit model for a K-band capacitive RF MEMS switch are presented. The fixed-fixed switch is designed with folded structures on the high-resistance silicon substrate, by using gold as the beam and silicon nitride as the dielectric layer. The resulting switch working on 25.2GHz exhibits the performance with insertion loss less than 0.20dB, isolation more than 40dB and the drive voltage less than 16V by simulation.

In this paper, a novel high isolation switch was designed and optimized on high-resistance silicon substrate with all-metal beams. The RF MEMS switch was modeled with gold surface micro-fabrication process. To obtain a low actuation voltage and a better isolation, a folded structure in the shunt part of the switch and a short capacitance in the series part were designed, respectively. By combining the series and shunt switches, the mixed structure offered a wide range (DC-40GHz) with excellent isolation better than-35dB and insertion loss less than 0.72dB at the same range, making it promising for applications with wide frequency bands.

This paper presents a K band (18GHz-26.5GHz) shunt capacitive micro-electromechanical systems (MEMS) switch. This switch used the coplanar waveguide (CPW) Defected ground structure (DGS) which is made by etching defect structure in CPW ground line. Furthermore the beam structure of the proposed switch is composed of one girder and two supporting beams. The design of the switchs structure is benefit to the apart between the DC signal and AC signal. The simulated values of the isolation of the switch on off-states is-55 dB at18.9 GHz, and the return loss at K band is greater than-0.3 dB. The pull-in voltage of the switch is 13.3 V.