Hexagonal boron nitride (h-BN) was recently reported to display single photon emission from ultraviolet to near-infrared range due to the existence of defects. Single photon emission has potential applications in quantum information processing and optoelectronics. These findings trigger increasing research interests in h-BN defects, such as revealing the nature of the defects. Here, we report another intriguing defect property in h-BN, namely photoluminescence (PL) upconversion (anti-Stokes process). The energy gain by the PL upconversion is about 162 meV. The anomalous PL upconversion is attributed to optical phonon absorption in the one-photon excitation process, based on excitation power, excitation wavelength, and temperature-dependence investigations. Possible constitutions of the defects are discussed from the results of scanning transmission electron microscopy (STEM) studies and theoretical calculations. These findings show that defects in h-BN exhibit strong defect-phonon coupling. The results from STEM and theoretical calculations are beneficial for understanding the constitution of the h-BN defects.

Recent findings about ultrahigh thermoelectric performances in SnSe single crystals have stimulated research on this binary semiconductor material. Furthermore, single-layer SnSe is an interesting analogue of phosphorene, with potential applications in two-dimensional (2D) nanoelectronics. Although significant advances in the synthesis of SnSe nanocrystals have been made, fabrication of well-defined large-sized single-layer SnSe flakes in a facile way still remains a challenge. The growth of single-layer rectangular SnSe flakes with a thickness of ~6.8 Å and lateral dimensions of about 30 µm × 50 µm is demonstrated by a two-step synthesis method, where bulk rectangular SnSe flakes were synthesized first by a vapor transport deposition method followed by a nitrogen etching technique to fabricate single-layer rectangular SnSe flakes in an atmospheric pressure system. The as-obtained rectangular SnSe flakes exhibited a pure crystalline phase oriented along the a-axis direction. Field-effect transistor devices fabricated on individual single-layer rectangular SnSe flakes using gold electrodes exhibited p-doped ambipolar behavior and a hole mobility of about 0.16 cm 2 V −1 s −1 . This two-step fabrication method can be helpful for growing other similar 2D large-sized single-layer materials.

Ruddlesden−Popper perovskites have been demonstrated to possess great potential for optical and optoelectronic devices. Because they exhibit better ambient stability than three-dimensional (3D) perovskites, they have been considered as potential substitutes for 3D perovskites as light absorbing layers to improve the photoresponsivity of monolayer transition metal dichalcogenide (TMDC)-based photodetectors. Investigation of the optoelectronic properties of TMDC monolayer/2D perovskite vertical heterostructures is however at an early stage. Here, we address the photovoltaic effect and the photodetection performance in tungsten disulfide (WS 2 ) monolayer/2D perovskite (C 6 H 5 C 2 H 4 NH 3 ) 2 PbI 4 (PEPI) vertical heterostructures. A vertical device geometry with separate graphene contacts to both heterointerface constituents acted as a photovoltaic device and self-driven photodetector. The photovoltaic device exhibited an open circuit voltage of −0.57 V and a short circuit current of 41.6 nA. A photoresponsivity of 0.13 mA/W at the WS 2 /PEPI heterointerface was achieved, which was signified by a factor of 5 compared to that from the individual WS 2 region. The current on/off ratio of the self-driven photodetector was approximately 1500. The photoresponsivity and external quantum efficiency of the self-driven photodetector were estimated to be 24.2 μA/W and 5.7 × 10 −5 , respectively. This work corroborates that 2D perovskites are promising light absorbing layers in optoelectronic devices with a TMDC-based heterointerface.