Wet oxidation and computer simulation of metal oxide semiconductor (MOS) structures were studied on n‐type (Si‐face and C‐face) and p‐type (Si‐face) 6H‐normalSiC . The effects of thermal oxidation conditions at temperatures between 1100 and 1250°C on the electrical properties of MOS capacitors were studied. Oxidation model parameters for SSUPREM3 are presented, and simulation results are compared to laboratory studies with good agreement. The C‐V characteristics of the MOS capacitors were measured at high frequency in the dark and under illumination at room temperature. Samples prepared by wet oxidation showed accumulation, depletion, and inversion regions, but they did not show inversion regions under dark conditions. The interface trap densities and emission time constants of fast states were determined by ac conductance measurements. The electrical properties of normaln‐normaland p‐normaltype 6H‐normalSiC were compared. It was found that oxidation rate of C‐face was five to seven times faster than that of Si‐face on normaln‐normaltype SiC . The electrical properties of Si‐face and C‐face of normaln‐normaltype 6H‐normalSiC showed that the quality of oxide on the Si‐face was superior to the oxide on the C‐face.

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