The electronic properties of two-dimensional monolayer and bilayer phosphorene subjected to uniaxial and biaxial strains have been investigated using first-principles calculations based on density functional theory. Strain engineering has obvious influence on the electronic properties of monolayer and bilayer phosphorene. By comparison, we find that biaxial strain is more effective in tuning the band gap than uniaxial strain. Interestingly, we observe the emergence of Dirac-like cones by the application of zigzag tensile strain in the monolayer and bilayer systems. For bilayer phosphorene, we induce the anisotropic Dirac-like dispersion by the application of appropriate armchair or biaxial compressive strain. Our results present very interesting possibilities for engineering the electronic properties of phosphorene and pave a way for tuning the band gap of future electronic and optoelectronic devices.

The electronic properties of two-dimensional puckered arsenene have been investigated using first-principles calculations. The effective mass of electrons exhibits highly anisotropic dispersion in intrinsic puckered arsenene. Futhermore, we find that out-of-plane strain is effective in tuning the band gap, as the material undergoes the transition into a metal from an indirect gap semiconductor. Remarkably, we observe the emergence of Dirac-like cone with in-plane strain. Strain modulates not only the band gap of monolayer arsenene, but also the effective mass. Our results present possibilities for engineering the electronic properties of two-dimensional puckered arsenene and pave a way for tuning carrier mobility of future electronic devices.

The quantum interference patterns induced by impurities in graphene can form the (√3 × √3)­R30° superlattice with intervalley scattering. This superlattice can lead to the folded Dirac cone at the center of Brillouin zone by coupling two non-equivalent valleys. Using angle-resolved photoemission spectroscopy (ARPES), we report the observation of suppression of the folded Dirac cone in mono- and bilayer graphene upon potassium doping. The intervalley coupling with chiral symmetry broken can persist upon a light potassium-doped level but be ruined at the heavily doped level. Meanwhile, the folded Dirac cone can be suppressed by the renormalization of the Dirac band with potassium doping. Our results demonstrate that the suppression of the intervalley scattering pattern by potassium doping could pave the way toward the realization of novel chiraltronic devices in superlattice graphene.

The quest for next generation spintronic devices has promoted the exploration of ferromagnetism in a two-dimensional (2D) limit which enriches the family of 2D materials. Here, we realized the molecular beam epitaxial growth of atomically flat chromium telluride (CrTex) films on Si(111) substrates in the 2D limit and discovered a thickness-dependent structural phase transition with self-intercalation during the growth. Combining the in situ reflection high-energy electron diffraction, scanning tunneling microscopy, x-ray photoemission spectroscopy, and ex situ x-ray diffraction, we found that the first layer of CrTex films formed in a CrTe2 crystalline phase as a buffer layer for further growth. Afterward, the chromium atoms began to intercalate into the layers of CrTe2, and the Cr3Te4 phase dominated the following growth over the second layer. Subsequent superconducting quantum interference device measurements verified the ferromagnetism in the chromium telluride film down to one layer limit. Our results provide important information on the structural phase transition during the growth of CrTex films, which would be an ideal platform for studying ferromagnetism in 2D systems, and the growth of high-quality CrTex films on Si substrates would benefit the further applications of 2D ferromagnetic films.